Author Affiliations
Abstract
1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China
2 Nantong Opto-Electronics Engineering Center Chinese Academy of Science, Nantong 226000, China
3 University of Chinese Academy of Science, Beijing 100049, China
An ultra-broadband and fabrication-tolerant silicon polarization rotator splitter is proposed in this Letter. Benefitting from the broadband and low-loss characteristics of the bi-level taper and counter-tapered coupler, the designed device has a simulated insertion loss and crosstalk of less than 0.2 and 15 dB in the waveband from 1290 to 1610 nm. These characteristics make it valuable in applications with large bandwidth requirements, such as full-grid Coarse wavelength division multiplexer (CWDM) and diplexer/triplexer fiber-to-the-home systems. The fabrication tolerance of the design is also analyzed, showing that the device performance is quite stable with normal manufacturing errors in silicon photonics foundries.
130.3120 Integrated optics devices 130.5440 Polarization-selective devices Chinese Optics Letters
2016, 14(8): 081301
Author Affiliations
Abstract
A compact bi-directional (BiDi) triplexer using grating-assisted multimode interference (MMI) coupler is proposed based on silicon nanowire waveguides.Because of the high index contrast between silicon and silicon dioxide, the size of the structure is greatly reduced with a footprint of 2.5 \times 911 (\mu m). Asymmetrical ports are introduced in the MMI structure to satisfy the bandwidth requirements of the industrial standards ITU-T G.983.3-dB bandwidths of 100, 22, and 15 nm are obtained for the wavelengths of 1 310, 1 490, and 1 550 nm, respectively. The device can be readily fabricated using a commercial CMOS process.
130.3120 Integrated optics devices 230.7390 Waveguides, planar 060.4230 Multiplexing Chinese Optics Letters
2013, 11(4): 041301
1 中国科学院上海冶金所
2 上海第一医学院附属眼耳鼻喉科医院
3 中国科学院上海光机所
利用高功率连续CO2激光定点辐照, 对砷离子注入的硅片进行退火。实验结果表明晶格损伤得到了完全恢复, 注入砷原子的替位率与电激活率高, 还克服了激光聚焦扫描退火时引起硅片表面变形的问题。
